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PTFA092201E ptfa092201f data sheet 1 of 11 rev. 03.1, 2009-02-20 all published data at t case = 25 c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! description the PTFA092201E and ptfa092201f are 220-watt, internally- matched ldmos fe ts intended for edge and wcdma applications in the 920 to 960 mhz band. manufactured with infineon's advanced ldmos process, these devices provide excellent thermal performance and superior reliability. ptf a092201e package h- 36260-2 thermally-enhanced high power rf ldmos fets 220 w, 920 ? 960 mhz 2-carrier wcdma performance v dd = 30 v, i dq = 1850 ma, ? = 960 mhz, 3gpp wcdma signal, p/a r = 8.1 db, 10 mhz carrier spacing, 3.84 mhz bandwidth 0 10 20 30 40 50 60 30 35 40 45 50 output power, avg. (dbm) drain efficiency (%) -60 -55 -50 -45 -40 -35 -30 imd (dbc), acpr (dbc) imd acpr gain efficiency rf characteristics two-carrier wcdma measurements ( not subject to production test?verified by design/characterization in infineon test fixture) v dd = 30 v, i dq = 1850 ma, p out = 55 w average ? 1 = 950 mhz, ? 2 = 960 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 8.1 db @ 0.01% ccdf characteristic symbol min typ max unit intermodulation distortion imd ? ?37 ? dbc gain g ps ? 18.5 ? db drain efficiency h d ? 30 ? % ptf a092201f package h- 37260-2 features ? pb-free, rohs-compliant and thermally-enhanced packages ? broadband internal matching ? typical two-carrier wcdma performance at 960?mhz, 30 v - average output power = 55 w - linear gain = 18.5 db - efficiency = 30% - intermodulation distortion = ?37 dbc - adjacent channel power = ?39 dbc ? typical cw performance, 960 mhz, 30 v - output power at p?1db = 250 w - gain = 17.5 db - efficiency = 59% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 30 v, 220?w?(cw) output power *see infineon distributor for future availability.
PTFA092201E ptfa092201f data sheet 2 of 11 rev. 03.1, 2009-02-20 *see infineon distributor for future availability. rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 30 v, i dq = 1850 ma, p out = 220 w pep, ? = 960 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 17.5 18.5 ? db drain efficiency h d 42 44 ? % intermodulation distortion imd ? ? ?28 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.04 ? w operating gate voltage v ds = 30 v, i dq = 1850 ma v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 700 w above 25 c derate by 4.0 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70 c, 220 w cw) r q jc 0.25 c/w ordering information type and version package outline package description shipping marking PTFA092201E v4 h-36260-2 thermally-enhanced slotted flange, tray PTFA092201E single-ended ptfa092201f v4 h-37260-2 thermally-enhanced earless flange, tray ptfa092201f single-ended
PTFA092201E ptfa092201f data sheet 3 of 11 rev. 03.1, 2009-02-20 2-carrier wcdma (high gain tune) v dd = 30 v, i dq = 2000 ma, ? = 960 mhz, 3gpp wcdma signal, p/a r = 8.1 db, 10 mhz carrier spacing, 3.84 mhz bandwidth 0 5 10 15 20 25 30 35 30 35 40 45 50 output power (dbm) efficiency (%), gain (db) -60 -55 -50 -45 -40 -35 -30 imd (dbc), acpr (dbc) efficiency acpr gain imd typical performance (data taken in a production test fixture) gain & efficiency vs. output power v dd = 30 v, i dq = 1850 ma, ? = 960 mhz 15 16 17 18 19 20 21 22 30 35 40 45 50 55 60 output power (dbm) gain (db) 0 10 20 30 40 50 60 70 drain efficiency (%) efficiency gain two-carrier wcdma power sweep v dd = 30 v, i dq = 1600 ma, ? 1 = 889 mhz, ? 2 = 894, par = 7.1 db each carrier at 0.01% probability -60 -50 -40 -30 -20 -10 0 0 10 20 30 40 50 output power (dbm) acpr (dbc) 5 10 15 20 25 30 35 drain efficiency (%) efficiency acpr 2-carrier wcdma performance v dd = 30 v, i dq = 1850 ma, ? = 960 mhz, 3gpp wcdma signal, p/a r = 8.1 db, 10 mhz carrier spacing, 3.84 mhz bandwidth 0 10 20 30 40 50 60 30 35 40 45 50 output power (dbm) efficiency (%), gain (db) -60 -55 -50 -45 -40 -35 -30 imd (dbc), acpr (dbc) efficiency gain acpr imd t case = 25c t case = 90c
PTFA092201E ptfa092201f data sheet 4 of 11 rev. 03.1, 2009-02-20 power sweep, cw v dd = 30 v, ? = 960 mhz, series show i dq 17 18 19 20 30 35 40 45 50 55 output power (dbm) power gain (db) 2300 ma 1450 ma 1550 ma 2-tone broadband (tuned for high gain) v dd = 30 v, i dq = 2000 ma, p out = 80 w 15 20 25 30 35 40 45 50 880 900 920 940 960 980 1000 frequency (mhz) efficiency (%), gain (db) -35 -30 -25 -20 -15 -10 -5 0 return loss (db) gain return loss efficiency 2-tone broadband performance v dd = 30 v, i dq = 1850 ma, p out = 110 w 15 20 25 30 35 40 45 50 880 900 920 940 960 980 1000 frequency (mhz) efficiency (%), gain (db) -35 -30 -25 -20 -15 -10 -5 0 return loss (db) gain return loss efficiency typical performance (cont.) cw (high gain tuned) gain & efficiency vs. output power v dd = 30 v, i dq = 2000 ma, ? = 960 mhz 15 16 17 18 19 20 21 22 30 35 40 45 50 55 60 output power (dbm) gain (db) 0 10 20 30 40 50 60 70 drain efficiency (%) efficiency gain
PTFA092201E ptfa092201f data sheet 5 of 11 rev. 03.1, 2009-02-20 is-95 cdma performance v dd = 30 v, i dq = 1850 ma, ? = 960 mhz 0 10 20 30 40 25 30 35 40 45 50 output power, avg. (dbm) drain efficiency (%) -80 -70 -60 -50 -40 adj. ch. power ratio (dbc) efficiency adj 750 khz alt 1 1.98 mhz output power vs. supply voltage i dq = 1850 ma, ? = 960 mhz 51 52 53 54 55 24 26 28 30 32 34 36 supply voltage (v) output power (dbm) intermodulation distortion vs. output power (high gain tune) v dd = 30 v, i dq = 2000 ma, ? 1 = 859, ? 2 = 960 mhz -80 -70 -60 -50 -40 -30 -20 30 35 40 45 50 55 output power, pep (dbm) imd (dbc) 3rd order 5th 7th typical performance (cont.) intermodulation distortion vs. output power v dd = 30 v, i dq = 1850 ma, ? 1 = 960, ?2 = 959 mhz -80 -70 -60 -50 -40 -30 -20 30 35 40 45 50 55 output power, pep (dbm) imd (dbc) 3rd order 5th 7th
PTFA092201E ptfa092201f data sheet 6 of 11 rev. 03.1, 2009-02-20 broadband circuit impedance z source z load g s d frequency z source w z load w mhz r jx r jx 900 2.256 ?1.363 1.722 ?0.413 920 2.250 ?1.094 1.653 ?0.109 940 2.282 ?0.826 1.651 0.186 960 2.239 ?0.545 1.562 0.518 980 2.288 ?0.307 1.562 0.795 0.1 0 . 1 0 . 1 - w a v e l e n g t h s t o w a r d g - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 900 mhz 980 mhz 900 mhz z load z source 980 mhz z 0 = 50 w bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 2.334 a 4.65 a 9.33 a 11.64 a 13.98 a 16.32 a 18.66 a 21 a typical performance (cont.)
PTFA092201E ptfa092201f data sheet 7 of 11 rev. 03.1, 2009-02-20 a 0 9 2 2 0 1 e f _ s c h rf_out rf_in r3 2k v c3 0.001f c2 0.001f q1 bcp56 r2 1.3k v qq1 lm7805 c1 0.001f v dd r5 10 v r4 2k v r1 1.2k v c8 33pf l 6 l 7 l 8 r8 10 v dut c6 1f c5 0.1f c4 10f 35v c7 33pf r7 5.1k v r6 5.1k v l 1 c9 3.9pf l1 c11 33pf c13 10f 50v c12 1f c16 10f 50v c24 2.6pf c25 33pf l 2 l 3 l 4 l 5 c10 4.9pf c14 100f 50v c15 0.1f l 9 l 10 l 11 l 12 l 13 c23 2.6pf c17 33pf c19 10f 50v c18 1f c22 10f 50v c20 100f 50v c21 0.1f l2 v dd reference circuit reference circuit block diagram for ? = 960 mhz circuit assembly information dut PTFA092201E or ptfa092201f ldmos transistor pcb 0.76 mm [.030"] thick, e r = 3.48 rogers ro4350 1 oz. copper microstrip electrical characteristics at 960 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.068 l , 52.0 w 12.78 x 1.60 0.503 x 0.063 l 2 0.041 l , 38.0 w 7.57 x 2.54 0.298 x 0.100 l 3 0.040 l , 38.0 w 7.34 x 2.54 0.289 x 0.100 l 4 0.092 l , 7.8 w 15.95 x 17.83 0.628 x 0.702 l 5 0.025 l , 7.8 w 4.29 x 17.83 0.169 x 0.702 l 6 0.208 l , 78.3 w 40.64 x 0.74 1.600 x 0.029 l 7, l 8 0.200 l , 60.1 w 40.64 x 1.24 1.500 x 0.049 l 9 0.102 l , 8.4 w 17.65 x 16.48 0.695 x 0.649 l 10 (taper) 0.021 l , 8.4 w / 10.1 w 3.56 x 16.48 / 13.36 0.140 x 0.649 / 0.526 l 11 (taper) 0.094 l , 10.1 w / 37.7 w 16.38 x 13.36 / 2.64 0.645 x 0.526 / 0.104 l 12 0.022 l , 37.0 w 4.04 x 2.64 0.159 x 0.104 l 13 0.035 l , 52.0 w 6.55 x 1.60 0.258 x 0.063 1 electrical characteristics are rounded.
PTFA092201E ptfa092201f data sheet 8 of 11 rev. 03.1, 2009-02-20 a092201ef_assy rf_in rf_out a082201in_02 a092201in_02 ro4350_.030 a082201out_02 a092201out_02 ro4350_.030 lm r4 q1 qq1 c3 c1 r2 c2 r5 r3 c4 c9 r1 c5 c8 r6 r7 c7 c6 r8 c10 c21 c25 c24 c17 c18 c19 c22 l2 c11 c12 c16 l1 c15 c23 c13 v dd v dd v dd c20 c14 reference circuit assembly diagram (not to scale)* reference circuit (cont.) component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key 399-1655-2-nd c5, c15, c21 capacitor, 0.1 f digi-key pcc104bct-nd c6, c12, c18 capacitor, 1 f atc 920c105 c7, c8, c11, c17, c25 ceramic capacitor, 33 pf atc 100b 330 c9 ceramic capacitor, 3.9 pf atc 100b 3r9 c10 ceramic capacitor, 4.9 pf atc 100b 4r9 c13, c16, c19, c22 tantalum capacitor, 10 f, 50 v garrett electronics tpse106k050r0400 c14, c20 electrolytic capacitor, 100 f, 50 v digi-key p5571-nd c23, c24 ceramic capacitor, 2.6 pf atc 100b 2r6 l1, l2 ferrite, 8.9 mm elna magnetics bds 4.6/3/8.9-4s2 q1 transistor infineon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor 1.3 k-ohms digi-key p1.3kgct-nd r3 chip resistor 2 k-ohms digi-key p2kect-nd r4 potentiometer 2 k-ohms digi-key 3224w-202etr-nd r5, r8 chip resistor 10 ohms digi-key p10ect-nd r6, r7 chip resistor 5.1 k-ohms digi-key p5.1kect-nd *gerber files for this circuit available on request
PTFA092201E ptfa092201f data sheet 9 of 11 rev. 03.1, 2009-02-20 package outline specifications package h-36260-2 diagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. pins: d = drain, s = source, g = gate. 4. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 5. gold plating thickness: s, d, g - flange & leads: 1.14 0.38 micron [45 15 microinch] 6. all tolerances 0.25 [.01] / 0.127 [.005] unless specified otherwise. find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower c66065-a2324-c001-01-0027
PTFA092201E ptfa092201f data sheet 10 of 11 rev. 03.1, 2009-02-20 package outline specifications (cont.) package h-37260-2 diagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. pins: d = drain, s = source, g = gate. 4. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 5. gold plating thickness: s, d, g - flange & leads: 1.14 0.38 micron [45 15 microinch] 6. all tolerances 0.25 [.01] / 0.127 [.005] unless specified otherwise. c66065-a2325-c001-01-0027 find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower
PTFA092201E/f v4 confidential, limited internal distribution revision history: 2009-02-20 data sheet previous version: 2006-06-05, data sheet rev. 02, product v1 page subjects (major changes since last revision) all new product version v4, new package diagram and information. 8 fixed typing error ames for final page. misc updates. goldmos ? is a registered trademark of infineon technologies ag. edition 2009-02-20 published by infineon technologies ag 81726 munich , germany ? 2006 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international

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